Thermally dried ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene for high mobility and high uniformity on a large area substrate
Japanese Journal of Applied Physics
By: Gi Seong Ryu, Myung Won Lee, Seung Hyeon Jeong, and Chung Kun Song
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Abstract
In this study we developed a simple ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene), which is known as a high-mobility soluble organic semiconductor, to achieve relatively high-mobility and high-uniformity performance for large-area applications. We analyzed the behavior of fluorescent particles in droplets and applied the results to determining a method of controlling the behavior of TIPS-pentacene molecules. The grain morphology of TIPS-pentacene varied depending on the temperature applied to the droplets during drying. We were able to obtain large and uniform grains at 46 degrees C without any "coffee stain". The process was applied to a large-size organic thin-film transistor (OTFT) backplane for an electrophoretic display panel containing 192 x 150 pixels on a 6-in.-sized substrate. The average of mobilities of 36 OTFTs, which were taken from different locations of the backplane, was 0.44 +/- 0.08 cm2.V-1.s-1, with a small deviation of 20%, over a 6-in.-size area comprising 28,800 OTFTs. This process providing high mobility and high uniformity can be achieved by simply maintaining the whole area of the substrate at a specific temperature (46 degrees C in this case) during drying of the droplets.
Suggested Citation
Ryu, G.S., Lee, M.W., Jeong, S.H., and Song, C.K., 2012, Thermally dried ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene for high mobility and high uniformity on a large area substrate: Japanese Journal of Applied Physics, v. 51, no. 5R, https://doi.org/10.1143/JJAP.51.051601.
| Publication type | Article |
|---|---|
| Publication Subtype | Journal Article |
| Title | Thermally dried ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene for high mobility and high uniformity on a large area substrate |
| Series title | Japanese Journal of Applied Physics |
| DOI | 10.1143/JJAP.51.051601 |
| Volume | 51 |
| Issue | 5R |
| Publication Date | May 01, 2012 |
| Year Published | 2012 |
| Language | English |
| Publisher | Japanese Journal of Applied Physics |
| Publisher location | Tokyo |
| Larger Work Type | Article |
| Larger Work Subtype | Journal Article |
| Larger Work Title | Japanese Journal of Applied Physics |